Surface and grain-boundary scattering in nanometric Cu films

Electron scattering at surfaces and grain boundaries in Cu thin films and wires

The electron scattering at surfaces, interfaces, and grain boundaries is investigated using polycrystalline and single-crystal Cu thin films and nanowires. The experimental data is described by a Fuchs–Sondheimer (FS) and Mayadas–Shatzkes (MS) model that is extended to account for the large variation in the specific resistivity of different grain boundaries as well as distinct top and bottom su...

Grain Growth Mechanism of Cu Thin Films

Since Cu was found to be attractive as interconnect materials for ultra-large scale integrated (ULSI) Si devices, the electrical properties of Cu films have been extensively studied to prepare low resistance films. It was found in our previous papers that reduction of the electrical resistance of the Cu films was achieved by increasing grain sizes of the Cu films and large-grained Cu films were...

Electron scattering and electrical conductance in polycrystalline metallic films and wires: impact of grain boundary scattering related to melting point.

For electrical conductance in polycrystalline metallic films and wires, the reflection coefficient of electrons at grain boundaries is explored and found to be proportional to the square root of the melting points of metals. As validated by available experimental results, this exploration enables classical models to take an essential role in theoretically predicting the electrical conductance o...

Suppressed grain-boundary scattering in atomic layer deposited Nb:TiO2 thin films

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Hydrogen concentration and bonding configuration in polycrystalline diamond films: From micro-to nanometric grain size